| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_129e393582e6bdf4029baf2206522f45 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3321 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D1-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45574
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32669 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50 |
| filingDate |
2014-03-12^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0c17d0be8bd323bbc8ebf1920c2e668
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93f8197699eb3029c12982a6a99008c7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1086e36663f7d599c3cf70e84beb4c2c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3f32f94cb44f17d0cc5faeeb027d337 |
| publicationDate |
2014-12-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201447029-A |
| titleOfInvention |
Plasma CVD device and plasma CVD method |
| abstract |
The present invention relates to a plasma CVD apparatus which is a vacuum vessel and a plasma CVD electrode unit and a substrate holding mechanism in a vacuum vessel, the plasma CVD electrode unit having an anode and a cathode opposite to the anode. And a first gas supply nozzle that supplies the gas in a plasma generation space between the anode and the cathode, and the substrate holding mechanism is disposed at a position where the gas passing through the plasma generation space hits, and the gas supply direction of the anode Both the length and the length of the gas supply direction of the cathode are longer than the distance between the anode and the cathode. The present invention provides a plasma CVD apparatus which can improve gas decomposition efficiency and achieve high film formation speed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I648426-B |
| priorityDate |
2013-03-15^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |