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filingDate 2014-05-13^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2015-01-01^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201501202-A
titleOfInvention Plasma etching method and plasma etching device
abstract A plasma etching method is provided which can obtain a good etching shape.nA plasma etching method is a plasma etching method for plasma etching a target object including an etching target film and a patterned mask, wherein the first step is to use a mask to etch the paste In the second step, at least a part of the side wall portion of the etching target film etched by the first step is used to deposit a ruthenium-containing film with a plasma containing ruthenium gas.
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