| abstract |
The present invention provides a chemical mechanical polishing (CMP) composition comprising (A) one or more compounds selected from the group of benzotriazole derivatives, which are used as corrosion inhibitors; and (B) inorganic particles, organic particles or Its complex or mixture. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives, which are useful as corrosion inhibitors, particularly for improving the removal of tantalum or tantalum nitride from a substrate by a chemical mechanical polishing (CMP) composition. To make a semiconductor device on the substrate in the presence of copper. |