| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-503
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32697
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-509 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
| filingDate |
2014-10-20^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_165251ceab59d0da18338a5767bf8f31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97ef9f0d4c96e36c6d054022e6d58580
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d234124be7e513dda348c4f8808368e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd97ca957ec62a8f68b493c9c1eff69d |
| publicationDate |
2015-08-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201530651-A |
| titleOfInvention |
Particle generation suppressor by DC bias adjustment |
| abstract |
Embodiments of the present disclosure generally relate to apparatus and methods for reducing particle generation in a processing chamber. In one embodiment, the method generally includes: generating a plasma between a powered top electrode and a grounded bottom electrode, wherein the top electrode is parallel to the bottom electrode; and applying a during a film deposition process A constant zero DC bias voltage is applied to the top electrode of the supply to minimize the potential difference between the powered top electrode and the plasma and/or the potential difference between the grounded bottom electrode and the plasma. Minimizing the potential difference between the plasma and the electrodes reduces particle generation because the acceleration of the plasma in the sheath region of the electrodes is reduced, and the plasma and the protective coating on the electrodes The collision force is minimized. Therefore, particle generation on the surface of the substrate is reduced. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I793218-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I571909-B |
| priorityDate |
2013-11-06^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |