| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B63-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66621
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-02 |
| filingDate |
2015-01-20^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77c4f32e9bc19f5772f47268ffaaa18d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04200c3ce14dedecbc43f7262fc6898d |
| publicationDate |
2015-10-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201539738-A |
| titleOfInvention |
Transistor |
| abstract |
Some embodiments include a configuration having a second semiconductor material on a first semiconductor material. Due to the different lattice characteristics of the first and second semiconductor materials, the second conductor material has strain near a region of the first semiconductor material. A transistor gate extends downward into the second semiconductor material. The gate dielectric material is along the sidewalls and a bottom of the gate of the transistor. The source/drain regions are along the sidewalls of the transistor gate, and the gate dielectric material is between the source/drain regions and the transistor gate. A channel region extends between the source/drain regions and below the bottom of the transistor gate. At least some of the channel regions are within the strain region. |
| priorityDate |
2014-04-04^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |