http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201633450-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2f90bef5e4eea79269d893d138eda905 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-683 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-16 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683 |
| filingDate | 2015-12-11^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c36df7abd1c5c7be39c54b96a80d853e |
| publicationDate | 2016-09-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201633450-A |
| titleOfInvention | Semiconductor processing element regeneration method |
| abstract | The present invention relates to a semiconductor processing element regeneration method, includingnStep: preparing a semiconductor processing element including a TaC coating layer, and forming a SiC deposition layer on the TaC coating layer, and at least selected from the group consisting of a gas including hydrogen gas, a gas including chlorine gas, and an inert gas The semiconductor processing element is heat treated at 1700-2700 ° C under any gas conditions or under vacuum. |
| priorityDate | 2014-12-12^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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