| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2015-11-26^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f305f9a082ca36227e516ae901353bdc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07274a6b9e958a5d48deeb45152ae5b6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af9b0ed5c62cb9c10030aa1e961f620f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1910a294322d39b838d5cf7900867146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f77167737b0b1b261a980782426c5f0 |
| publicationDate |
2016-10-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201637171-A |
| titleOfInvention |
Semiconductor component and method of manufacturing same |
| abstract |
A method of fabricating a semiconductor device comprising forming a fin structure on a substrate. An isolation insulating layer is formed to protrude the upper portion of the fin structure from the isolation insulating layer. The gate structure is formed on a portion of the fin structure. A plurality of first recesses are formed in the isolation insulating layer on both sides of the fin structure. The second recess is formed in a portion of the fin structure that is not covered by the gate structure. The depth D1 of the second recess and the depth D2 of the first recess satisfy 0□D1□D2 (but D1 and D2 are not at the same time), wherein the depth D1 and the depth D2 are measured from the uppermost surface of the isolation insulating layer. |
| priorityDate |
2015-01-15^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |