| abstract |
Apparatus and methods for treating a substrate in accordance with a PECVD process are described. The temperature profile of the substrate is adjusted to alter the deposition rate distribution throughout the substrate. The plasma density distribution is adjusted to alter the deposition rate distribution throughout the substrate. Heating the surface of the chamber in contact with the plasma to improve plasma density uniformity and reduce the formation of low quality deposits on the chamber surface. In-situ measurement techniques can be used to monitor the progress of the deposition process and to trigger control actions involving substrate temperature distribution, plasma density distribution, pressure, temperature, and reactant flow. |