| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02609
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K101-40 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-351
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-362 |
| filingDate |
2017-04-18^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6504259967d3b064a90eff4b17382a5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_554a4ee0eab5e4bf9bfe2b4fb7797c79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_262d05bbe5c190a975a1cda67d700b9e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_873194d10e1d98cd223c9c56c53a3d97
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate |
2018-01-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201802872-A |
| titleOfInvention |
Stripping method and method of manufacturing the same |
| abstract |
The invention provides a peeling method with low cost and high productivity. A photosensitive and thermosetting material is used to form a first layer having a thickness of 0.1 μm or more and 3 μm or less on a substrate for forming. A photolithography method is used to form an opening in the first layer to form a resin layer having an opening. A silicon layer or an oxide layer is formed in such a manner that the openings of the resin layer overlap, and a transistor including a metal oxide is formed on the resin layer. A process for forming a source or a drain of the transistor on the silicon or oxide layer In the same process, a conductive layer is formed, and the resin layer and the silicon layer or the oxide layer are irradiated with light by a laser to separate the transistor and the conductive layer from the substrate for formation. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I795109-B |
| priorityDate |
2016-04-22^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |