http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201807812-A

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filingDate 2017-01-25^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2018-03-01^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201807812-A
titleOfInvention Semiconductor memory device and method of manufacturing same
abstract A semiconductor memory device according to an embodiment includes a substrate, a plurality of electrodes, at least one pillar structure, at least one charge accumulation film, and at least one insulating member. The plurality of electrodes are provided on the substrate, and are laminated separately to form a laminated body. The electrodes have a first width in a first direction along the surface of the substrate, and have a second width that intersects the first direction along the surface. Directional extension. The pillar structure is provided in the laminated body, and includes a semiconductor layer extending in a laminated direction of the laminated body. The charge accumulation film is provided between the semiconductor layer and the plurality of electrodes. The insulating member has a width smaller than the first width in the first direction, and is extended in the laminated direction.
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priorityDate 2016-03-11^^<http://www.w3.org/2001/XMLSchema#date>
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