| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2f90bef5e4eea79269d893d138eda905 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2002-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-84 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-984
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B32-956
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-325 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 |
| filingDate |
2017-08-18^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c36df7abd1c5c7be39c54b96a80d853e |
| publicationDate |
2018-04-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201812123-A |
| titleOfInvention |
Tantalum carbide material and tantalum carbide composite material |
| abstract |
The present invention relates to a SiC material and a SiC composite material, and more specifically, a SiC material and a SiC composite material having a diffraction intensity ratio I of an X-diffraction peak calculated according to the following Formula 1 and less than 1.5. The invention can provide SiC material and SiC composite material, which are uniformly etched when exposed to plasma, which can reduce the occurrence of cracks, holes, and the like. [Formula 1] Diffraction intensity ratio I = (200 plane peak intensity + 220 plane peak intensity) / 111 plane peak intensity |
| priorityDate |
2016-08-18^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |