| abstract |
The invention discloses an electrolytic plating composition for overfilling sub-micron features in a semiconductor integrated circuit device, and a method for using the same. The composition comprises: (a) a source of copper ions which are electrolytically deposited on a substrate and have electrical interconnection characteristics; and (b) an inhibitor comprising at least three amine sites, the polyether comprising a compound having propylene oxide (PO ) A block copolymer substituent of a repeating unit and an ethylene oxide (EO) repeating unit, wherein the number average molecular weight of the inhibitor compound is between about 1,000 and about 20,000. |