http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201915130-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a665d61597c2731ab4130971ee397dc9 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1436 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate | 2018-08-08^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0601f118d3db545743178c76e12e2ae0 |
| publicationDate | 2019-04-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201915130-A |
| titleOfInvention | Polishing composition, method for producing polishing composition, polishing method, and method for producing semiconductor substrate |
| abstract | It is an object of the present invention to provide a polishing composition comprising: a first layer including a SiO 2 film; and at least one selected from the group consisting of SiOC, SiOCH, SiCN, and SiC. The polishing object of the second layer, the polishing composition can selectively polish the second layer with respect to the first layer. The solution of the present invention is a polishing composition, comprising: surface-modified abrasive particles obtained by fixing an organic acid on a surface; and a dispersing medium; wherein the average primary particle diameter of the surface-modified abrasive particles exceeds 6 nm and is less than 35nm; and pH is 5.0 or less. |
| priorityDate | 2017-09-26^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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