http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201919093-A

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filingDate 2018-02-26^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8e6bc93e040c193a5b1b236a7f2ae04d
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publicationDate 2019-05-16^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-201919093-A
titleOfInvention Semiconductor device manufacturing method, substrate processing device, and computer readable recording medium
abstract [Question] Provide technology that can improve the processing uniformity of each substrate. [Solutions] There are: a process for supplying an inert gas to the processing chamber; a process for exhausting the atmosphere in the processing chamber from the exhaust section; a first data acquisition process for obtaining the first data that becomes the reference data, the reference data is directed to The relationship between the pressure in one of the processing chamber or the exhaust part and the flow rate of the inert gas; and the exhaust characteristic adjustment process for adjusting the valve opening degree of the exhaust adjustment part provided in the exhaust part; the exhaust characteristic adjustment The project includes measuring the pressure in one of the processing chamber or the exhaust part while changing the flow rate of the inert gas while the valve opening degree of the exhaust adjusting part is set to a predetermined value, and obtaining the pressure and The actual measurement data related to the inert gas flow is the second data acquisition process of the second data; the project to determine whether the difference data between the second data and the first data is within the specified range; and when the difference data is not within the specified range The process of changing the valve opening of the exhaust adjustment unit.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I797469-B
priorityDate 2017-09-22^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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