http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-202002018-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57341227c065dbddd1d3cf801bbaa86a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 |
| filingDate | 2018-06-20^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47fcc0485f39ee8be10c0584312847a0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb77e607d364bef224c24f50f9813b4a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e74d8d8940fe1c0cfb2de97a2a650e80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af55439f9f1c93d0d1c64ea3ab4fdb76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e664ebe949d0f2098ef9650698fc67c |
| publicationDate | 2020-01-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-202002018-A |
| titleOfInvention | Semiconductor structure and method for fabricating the same |
| abstract | A method for fabricating a semiconductor structure includes providing a substrate. The method further includes implanting the substrate to form a high-voltage well region having a first conductivity type. The method further includes forming a pair of drain drift regions in the high-voltage well region. The pair of drain drift regions are on the front side of the substrate, and the pair of drain drift regions have a second conductivity type opposite to the first conductivity type. The method further includes forming a gate electrode embedded in the high-voltage well region. The gate electrode is positioned between the pair of drain drift regions and laterally spaced apart from the pair of drain drift regions. |
| priorityDate | 2018-06-20^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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