http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-202008583-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57341227c065dbddd1d3cf801bbaa86a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-71 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate | 2018-08-03^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb77e607d364bef224c24f50f9813b4a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0673632a24b73cf47b44de64c1b0a082 |
| publicationDate | 2020-02-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-202008583-A |
| titleOfInvention | Semiconductor structure and method for forming the same |
| abstract | A semiconductor structure is provided. The semiconductor structure includes a substrate, a first oxide layer disposed over the substrate and a second oxide layer. The second oxide layer is disposed at one side of the first oxide layer and is in contact with the first oxide layer. The first oxide layer and the second oxide layer comprise an identical oxide. The second oxide layer partially overlaps the first oxide layer. The semiconductor structure also includes a semiconductor layer disposed over the second oxide layer. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I773519-B |
| priorityDate | 2018-08-03^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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