http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-202015220-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_02d99acd0b92156c011c671a259f2295
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11551
filingDate 2018-10-08^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62c85461987ef6444ad6288861a3f6c8
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publicationDate 2020-04-16^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-202015220-A
titleOfInvention Non-volatile memory structure and manufacturing method thereof
abstract A manufacturing method of a non-volatile memory structure includes forming a bottle-shaped trench in a substrate, wherein the bottle-shaped trench has a neck portion adjacent to a surface of the substrate and a main body portion connecting the neck portion, a width of the neck portion is smaller than a width of the main body portion; performing a first ion implantation process to form a source region in the substrate at the bottom of the main body portion; forming a charge storage layer on the inner surface of the bottle-shaped trench; forming a bottle-shaped gate in the bottle-shaped trench; and performing a second ion implantation process to form a drain region in the substrate adjacent to the neck portion.
priorityDate 2018-10-08^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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