| abstract |
Provided is a memory device including a substrate, a plurality of stack structures, a protective layer, and a plurality of contact plugs. The stack structures are disposed over the substrate. The protective layer conformally covers top surfaces and sidewalls of the stack structures. The contact plugs are respectively disposed over the substrate between the stack structures. One of the contact plugs includes a narrower portion and a wider portion over the narrower portion. In a top view, the wider portion is separated from an adjacent protective layer by a distance. |