http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-202117439-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_44ff3005508304394801e265e503b811
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G21K2201-067
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-24
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-24
filingDate 2020-09-23^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f0619dcbec649f0f678a7280ceeac8a8
publicationDate 2021-05-01^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-202117439-A
titleOfInvention Substrate with multilayer reflective film, reflective photomask base, reflective photomask, and semiconductor device manufacturing method
abstract The present invention provides a substrate with a multilayer reflective film, which is used to manufacture a reflective photomask base and a reflective photomask with a multilayer reflective film that has a high reflectivity to exposed light and a low background level during defect inspection. The substrate 110 with a multilayer reflective film includes a substrate 1 and a multilayer reflective film 5. The multilayer reflective film 5 includes a multilayer film in which a low-refractive index layer and a high-refractive index layer are alternately laminated on the substrate 1. The multilayer reflective film 5 contains at least one additive element selected from hydrogen (H), deuterium (D), and helium (He). The atomic number density of the additive element in the multilayer reflective film 5 is 0.006 atom/nm 3 or more and 0.50 atom/nm 3 or less.
priorityDate 2019-09-26^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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