| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421cadb30fc0074fe61126eb980d19d6 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-24 |
| filingDate |
2021-02-20^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fba777be8ead1f62695aa0df6b3b0c7a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1095f2e0b6d12f1baf67bbfe66456aa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c330eb1ae8d49eeef63221d5d5082a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d05b46a8c20b3b13d0c1c6873dc2c32b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_efcdc198234e894f0504c0bc10728d5a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ebf65d7aeb91616fd8df37d709cdb0c2 |
| publicationDate |
2021-10-16^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-202139782-A |
| titleOfInvention |
Plasma processing apparatus and plasma processing method |
| abstract |
In order to provide a plasma processing apparatus or a plasma processing method that improves the yield, the method includes: a processing chamber arranged inside a vacuum container to provide a wafer to be processed inside; and a processing gas supply line connected to the vacuum container And communicate with the aforementioned processing chamber, and supply adhesive processing gas to the processing chamber; and the gas exhaust line of the aforementioned processing gas will be connected to the exhaust pump and the processing chamber exhaust line communicating with the aforementioned processing chamber Connect with the gas supply line to connect them; between one process of etching the wafer and the next process, with the supply of the process gas to the process chamber stopped, the process The process in which the processing gas in the gas supply line is exhausted through the gas exhaust line and the processing chamber exhaust line. |
| priorityDate |
2020-04-03^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |