http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-202145528-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa907cbef2178b7f30a042518be6b17b
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11551
filingDate 2020-07-21^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51b4e03a5b9e43006f20d94b732a7930
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97a67f51153339e2026ee3f324aa5de0
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publicationDate 2021-12-01^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-202145528-A
titleOfInvention Three-dimensional memory devices
abstract Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, the 3D memory device includes a stop layer; a polysilicon layer; a memory stack layer including alternate stacked conductive layers and stacked dielectric layers; and a plurality of channel structures, each of the channel structures vertically extending through the memory stack layer and the polysilicon layer and stopping at the stop layer.
priorityDate 2020-05-27^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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