| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31662
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-906
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-315 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31658
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-0335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76889
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28525 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate |
1997-07-25^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
1998-09-11^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c61e0f3ec1e5749722648a86fde984a0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0306773560f9561c6d3c7e0840f4d6c5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2298cb072c1a8547364b4e6659365348 |
| publicationDate |
1998-09-11^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-340259-B |
| titleOfInvention |
Manufacturing method of semiconductor devices |
| abstract |
A sort of manufacturing method of semiconductor devices, having: step of element formation area for formation of a plurality of elements mutually electrically insulated by means of the element separation insulation film on the main surface of the semiconductor substrate; step of formation of a pair of supply/drain area at said element formation area with respect to said element separation insulation film; step of formation of port electrode with intervention of the port insulation film in the area held by said pair of supply/drain area on said main surface; step of stacking chip growth on the surface of said supply/drain area with formation of selective stacking chip growth of silica, or silica-germanium alloy; step in-element insulation by application onto said semiconductor substrate main surface, with oxidization or removal of the multichip created in said stacking chip growth step for separation and insulation of the stacking chip layers with respect to the elements electrically; and post-insulation step among the elements with formation of in-layer insulation film on the surface of the semiconductor substrate. |
| priorityDate |
1997-04-04^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |