http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-432744-B

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01P3-00
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03H2-00
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filingDate 1997-10-03^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2001-05-01^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d37051c7e037d30a201a895345ecc192
publicationDate 2001-05-01^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-432744-B
titleOfInvention Magnetostatic-wave device
abstract A magnetostatic-wave device includes a dielectric substrate on which parallel first electrically conductive lines are formed. A magnetostatic-wave device formed of a gadolinium-gallium-garnet (GGG) substrate on which yttrium-iron-garnet (YIG) thin films are formed is disposed on the first electrically conductive lines. Crossed second electrically conductive lines are formed on a YIG thin film. Lands are formed at both ends of these electrically conductive lines and are connected to each other with bonding wire to form one electrically conductive line. Input and output ends are formed between both ends of this electrically conductive line and the ground.
priorityDate 1996-10-11^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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