http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-434840-B

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filingDate 1998-03-26^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2001-05-16^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf499d5bb1b4eb60b9aaa3825fc24823
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6308578f5c6336aa886b93b0519a964
publicationDate 2001-05-16^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-434840-B
titleOfInvention Method for fabricating microstructure
abstract A method for forming a microstructure includes photolithographically forming a vertically extending post on a portion of a surface of a substrate to provide a first structure. A flowable, sacrificial material is deposited over a surface of the first structure. The flowable, sacrificial materially flows off the top surface and sidewall portions of the post onto adjacent portions of the surface of the substrate to provide a second structure. A non-sacrificial material is deposited over a surface of the second structure. The non-sacrificial material is deposited to conform to the surface of the second structure. The non-sacrificial is deposited over the sacrificial material, over the sidewall portions and over the top surface of the post. The deposited sacrificial material is selectively removed while the non-sacrificial material remains to form a third structure with a horizontal member provided by the non-sacrificial material. The horizontal member is supported a predetermined distance above the surface of the substrate by a lower portion of the post. The flowable material is a flowable oxide, for example, hydrogensilsesquioxane glass, and the post has a width less than 20 mu m. The resulting structure, formed with a single photolithographic step, is used for supporting a capacitor deposited over it. The capacitor is formed as a sequence of deposition steps; i.e., deposition a first conductive layer over a surface of the support structure; depositing a dielectric layer over the conductive layer; and depositing a second conductive layer over the dielectric layer.
priorityDate 1997-03-31^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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