http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-437046-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5256 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 |
| filingDate | 1998-08-06^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2001-05-28^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6308578f5c6336aa886b93b0519a964 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf499d5bb1b4eb60b9aaa3825fc24823 |
| publicationDate | 2001-05-28^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-437046-B |
| titleOfInvention | Improved techniques for forming electrically blowable fuses on an integrated circuit |
| abstract | A method for fabricating an electrically blowable fuse on a semiconductor substrate. The method includes forming a fuse portion 102 on the semiconductor substrate. The fuse portion is configured to turn substantially non-conductive when a current exceeding a predefined current level passes through the fuse portion. The method also includes depositing a substantially conformal first layer 302 of dielectric material above the fuse portion and depositing a second layer 304 of dielectric material above the first layer, thereby forming a protrusion of dielectric material above the fuse portion. The second layer being different from the first layer. The method further includes performing chemical-mechanical polish on the protrusion to form an opening through the second layer above the protrusion. There is also included etching, in a substantially isotropic manner, a portion of the first layer through the opening to form a microcavity 502 about the fuse portion. The etching is substantially selective to the second layer and the fuse portion. Additionally, there is included depositing a substantially conformal third layer 606 of dielectric material above the second layer, thereby closing the opening in the second layer. |
| priorityDate | 1997-09-19^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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