http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-445396-B
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_70a363846d3673efcdbd00d85315c6c6 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F112-08 |
filingDate | 1999-09-22^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2001-07-11^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6316e7d4e51f77be224155d30901d153 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2131c4cd4b10f20d39a3150f7be9c5ea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_906d5bfe1e72a9f8ba273d85d0f02c15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_18c81d0c22c49c13cb07f28a8d8c499f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_994d1875750fd6b38ddb2504d71ded19 |
publicationDate | 2001-07-11^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-445396-B |
titleOfInvention | Resin for chemically amplified resist |
abstract | The present invention relates to a resin for chemically amplified resist and resist compositions comprising the resin. It is an object of the present invention to provide new polymeric resins which can be applied to a chemically amplified resist that can form superior micro patterns on a wafer by sensitive response to deep ultraviolet light in a photolithography process, to increase the safety of the post exposure delay (PED), and to provide the relevant applicable resist compositions. The chemically amplified resist compositions that comprise alkali developable polymeric resin selected can form micro patterns having a superior degree of resolution on a wafer by responding to deep ultra-violet light in a photolithography process. |
priorityDate | 1999-02-19^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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