| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b7317808024e524eea40a6c5a5ad6a22 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78624
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7824
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66674 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2001-04-25^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-09-01^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e285ddfb4c19ad9f8f60d38f560d004b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dd6fb0d55cfb1b1f2fccc586c692799
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e738bc77820e04c1e67d3a1f4b1d3273 |
| publicationDate |
2002-09-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-501266-B |
| titleOfInvention |
A high voltage thin film transistor with improved on-state characteristics and method for making same |
| abstract |
The present invention is directed to an SOI LDMOS device having improved current handling capability, particularly in the source-follower mode, while maintaining an improved breakdown voltage capability. The improvement in current handling capability is achieved in a first embodiment by introducing an offset region between the source and thin drift regions. The offset region achieves an offset between the onset of the linear doping profile and the thinning of the SOI layer that results in the thin drift region. In a second embodiment a further increase in the current handling capability of an SOI device is achieved by fabricating an oxide layer over the offset region, with the thickness of the oxide layer varying up to about half the thickness of the oxide layer fabricated over the thin drift region. |
| priorityDate |
2000-03-30^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |