| abstract |
This invention relates to the use of large quantity of photons in a short period of time to irradiate a semiconductor substrate so that the contact hole connecting the substrate and wiring and films formed on the substrate such as silicide layer and silicon nitride layer can be improved. During the formation of fine contact holes, an SiN film 109 is formed inside of the contact hole of contact wiring with W film 108 embedded. A heating process at below 600 DEG C is carried out and, meanwhile, a heating process for shorter than 10 msec with light whose main wavelength is shorter than the light absorbing end of silicon is also performed. This leads to a reaction at the interface between the TiN film and the substrate 100 to reduce the native oxide film. Therefore, the dopant profile of the diffusion layer is not affected. Moreover, on SiN film above the polysilicon gate, irradiation of a white light with wavelength greater than 200 nm and energy between 10 to 100 J/cm<SP>2</SP> is performed at least once within 10 msec to remove hydrogen coming from the heating treatment and prevent device degradation from a boron punch-through phenomenon. |