| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9fc0a00eab3a757e8324b1e887d7ba97 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T117-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02373
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8258
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0605
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-024
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8258
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 |
| filingDate |
2001-12-12^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-01-01^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5791a700c55bfe52df5f23842668fd91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00be85b56a15fa79d3ca8ad9b48d6574
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c0f8ece31094e3f90f5c74bedbee4c43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ac8db1f32e82c9aa09e729832dbd073c |
| publicationDate |
2003-01-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-516231-B |
| titleOfInvention |
Apparatus for fabricating semiconductor structures |
| abstract |
An apparatus (100) and method (800) for forming high quality epitaxial layers of monocrystalline materials grown overlying monocrystalline substrates (310) such as large silicon wafers is provided. The apparatus (100) includes at least two deposition chambers (110) and (140) that are coupled together. The first chamber (110) is used to form an accommodating buffer layer (320) on the substrate (310) and the second (140) is used to form a layer of monocrystalline material (330) overlying the accommodating buffer layer (320). |
| priorityDate |
2001-02-09^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |