| abstract |
Semiconductor-chip, especially radiation-emitting semiconductor-chip, with an active thin-film layer (2), in which photons-emitting region is found, and with a carrier-substrate (1) for the thin-film layer (2), which is arranged on an side, which is not in the radiation-direction of the chip, of the thin-film layer (2), and said carrier-substrate (1) is connected with the thin-film layer (2). In the active thin-film layer (2), at least one cavity (8) is formed from the carrier-substrate (1) direction, through the cavity (8) many mesas (4) are formed on the boundary between the carrier-substrate (1) and the thin-film layer (2). |