http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-533593-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_10cd067474edb79f198ed3f34fbf61b6 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-414 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R27-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
| filingDate | 2002-05-20^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2003-05-21^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a228b09f51ffea9d1f22ea993bd7939 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3e1f572d17fe25712116f174076b61c |
| publicationDate | 2003-05-21^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-533593-B |
| titleOfInvention | Method of manufacturing amorphous hydrocarbon pH ion sensitive field effect transistor and method and device of measuring temperature parameter, drift and hysteresis thereof |
| abstract | A pH ion sensitive field effect transistor (pH-ISFET) device with amorphous hydrocarbon sensitive film is provided, which uses a plasma enhanced-low pressure chemical vapor deposition (PE-LPCVD) system to deposit an amorphous hydrocarbon film on the gate oxide layer of the ISFET. Under the optimized condition of the invention, a linear sensitivity of 53-59 mV/pH is obtained. The ISFET manufactured by the optimized condition utilizes a constant voltage constant current circuit and a voltage-time recorder to respectively measure hysteresis and drift of the device. A current-voltage (CV) measurement system is also used to determine CV curves of pH-ISFET with amorphous hydrocarbon/silicon dioxide bi-layer structure at various operation temperature and pH values. Therefore, temperature parameter of the amorphous hydrocarbon pH-ISFET can be obtained from relationships between these CV curves and temperature. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109449171-A |
| priorityDate | 2002-05-20^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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