| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ea5a7d58e7c86721ce6e9992ae8777a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-981 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823892
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0475 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2001-11-08^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-06-01^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04e2c7b75136759ede047d793683dc30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e819ac3731db3082a79140e4c2e0152e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9bc5d1b66f79cce533aaa5055039967
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9d3e53e268973e50441c92433d6a121 |
| publicationDate |
2003-06-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-535281-B |
| titleOfInvention |
Semiconductor integrated circuit device and method of manufacturing the same |
| abstract |
The purpose of the present invention is to provide a technology to raise a threshold electric potential of a parasitic MOS of a semiconductor integrated circuit device comprising a high breakdown-strength MISFET. A silicon oxide film 5c is formed on a field oxide film 4 of high breakdown-strength MISFET formation regions HN and HP. As a result, the threshold electric potential of the parasitic MOS formed on the field oxide film 4 is raised. An impurity is implanted for adjusting the threshold value of a low breakdown-strength MISFET with a polycrystal silicon film 111 which is to be a gate electrode of the low breakdown-strength MIFET formed on a gate electrode FG of the high breakdown strength MISFET. As a result, the impurity remains in the gate electrode FG of the high breakdown-strength MISFET, suppressing occurrence of NBT phenomenon. |
| priorityDate |
2000-11-30^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |