| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2002-10-17^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-11-11^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1efa3eba66cd0a5e743016a1214152f1 |
| publicationDate |
2003-11-11^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-561510-B |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
A dose or arsenic for an extension region in an NMOS transistor is in a range from 5x10<14> to 2x10<15> ions/cm<2> and preferably in a range from 1.1x10<15> to 1.5x10<14> ions/cm<2>. Also, in addition to arsenic, a low concentration of phosphorus is doped into the extension region by ion implantation. Consequently, with a semiconductor device of the CMOS structure, it is possible to prevent unwanted creeping of silicide that occurs often in the shallow junction region depending on a concentration of an impurity having a low diffusion coefficient as represented by arsenic. Further, not only can the resistance in the shallow junction region be lowered, but also an amount of overlaps can be optimized in each transistor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8004050-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7714364-B2 |
| priorityDate |
2002-03-19^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |