| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76888 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2002-10-25^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-05-11^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a72c00f2a23951ac58d2e48dbcc9507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91e20cb53cd4405f5640112340db5437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_202f1ca5367a8b45ab17cbfcd3c8452b |
| publicationDate |
2004-05-11^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-587274-B |
| titleOfInvention |
Semiconductor device and a method for manufacturing thereof |
| abstract |
The present invention is related to semiconductor device and its manufacturing method. The semiconductor device is provided with the followings: semiconductor substrate on which devices are formed; low-dielectric-constant insulating film, which has a relative permittivity of 3 or below and is formed on the semiconductor substrate; a plug and a wiring layer, which are buried in a low-dielectric-constant insulating film; a high-Young's-modulus insulating film, which has a Young's modulus larger than 15 GPa and is formed between the low-dielectric-constant insulating film and the plug, so as to contact with the sides of plug. |
| priorityDate |
2001-12-26^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |