| abstract |
By imparting conductivity to specified regions of a semiconductor material film 4 formed over a substrate 2, the semiconductor material film 4, in addition to being processed into channel portions (active layers) 4a, source portions 4b, and drain portions 4c of TFTs, is processed into conductive elements containing pixel electrodes 10 connected to the drain portions 4c. Regions composed of an intrinsic semiconductor to which impurities have not been added serve as the active layers (channel regions) of the TFTs and regions to which impurities have been added serve as conductive elements. When transparent electrodes are formed, an oxide semiconductor is used. |