http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-589710-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2002-09-18^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2004-06-01^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d68943c9f339c56e4d52676ea751376 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27d5e02520f3050ff3402fd7bc1a17f6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb3010384e6abd4c7231c96ab628a632 |
| publicationDate | 2004-06-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-589710-B |
| titleOfInvention | Metal interconnect with cap layer and manufacturing method thereof |
| abstract | This invention provides a metal interconnect with cap layer, whose manufacturing method comprises, firstly, providing a semiconductor substrate with a dielectric layer formed thereon a metal interconnect; and then forming a plurality of barrier layers on the dielectric layer and the metal interconnect, in which the barrier layers are combinations of silicon carbide compound layer and pure silicon carbide layer. |
| priorityDate | 2002-09-18^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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