http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I233184-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0328 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0296 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-107 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02966 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-072 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0328 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0296 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01J1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-036 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-107 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0248 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0256 |
| filingDate | 2003-07-18^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-05-21^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b0459559e048d78c0cee19a9e9914e78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_214f9f8cb061255b8018dfaea43e38b8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d912f21dce465f386b027ae91a59402f |
| publicationDate | 2005-05-21^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I233184-B |
| titleOfInvention | On-p-GaAs substrate Zn1-xMgxSySe1-y pin photodiode and on-p-GaAs substrate Zn1-xMgxSySe1-y avalanche photodiode |
| abstract | A blue-ultraviolet on-p-GaAs substrate pin Zn1-xMgxSySe1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)<m> superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Incidence light arrives at the i-layer without passing ZnTe layers. Since the incidence light is not absorbed by ZnTe layers, high quantum efficiency and high sensitivity are obtained. A blue-ultraviolet on-p-GaAs substrate avalanche Zn1-xMgxSySe1-y photodiode with high sensitivity, high quantum efficiency, a wide sensitivity range, high reliability and a long lifetime. The ZnMgSSe avalanche photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)<m> superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, a lower doped n<->-Zn1-xMgxSySe1-y layer, a higher doped n<+>-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Since the incidence light is not absorbed by ZnTe layers, a high avalanche gain, high quantum efficiency and high sensitivity are obtained. |
| priorityDate | 2002-08-26^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
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