http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I238541-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2d0d5ba3a93179d1085e259d742b3c5d |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3228 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-44 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| filingDate | 2001-04-16^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2005-08-21^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0a306c1f2f59f940b9f7eb5239e5237d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b76a4c4a0d18ef5a224826937d5e7f25 |
| publicationDate | 2005-08-21^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I238541-B |
| titleOfInvention | Fabrication of semiconductor materials and devices with controlled electrical conductivity |
| abstract | A method for protecting the surface of a semiconductor material (30, 50) from damage and dopant passivation is described. A barrier layer (32, 52) of dense or reactive material is deposited on the semiconductor material shortly after growth in a growth reactor (10) such as a MOCVD reactor, using the MOCVD source gasses. The barrier layer (32, 52) blocks the diffusion of hydrogen into the material. The reactor (10) can then be cooled in a reactive or non-reactive gas ambience. The semiconductor material can then be removed from the reactor (10) with little or no passivation of the dopant species. The barrier layer (32, 52) can be removed using a variety of etching processes, including wet chemical etching or can be left at the semiconductor material for surface protection. The barrier layer (32, 52) can also be a gettering layer that chemically binds hydrogen trapped in the semiconductor material and/or blocks hydrogen diffusion into the material. |
| priorityDate | 2000-03-14^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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