http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I247348-B

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_461514df460e0cdd5644e86ba60adbf7
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
filingDate 2004-06-30^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2006-01-11^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ef374b4e03fde6f4446acda4cdb8027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e323d8e874a7bcdc66f16d6ffa4b1e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb8ae093bc92abc5587b19a95c9ce5d0
publicationDate 2006-01-11^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I247348-B
titleOfInvention Process for two-dimensional buckled quantum well
abstract The present invention provides a process method two-dimensional buckled quantum well. This method comprises the following procedures: firstly, it provides a first substrate. Secondly, it grows a semiconductor layer on this first substrate, the materials of which is different from the first substrate material. Further, it grows on the semiconductor layer a first cover layer, and forms a first wafer structure. Furthermore, it carries out the ion implantation to this first wafer structure, and forms an ion implantation layer. Moreover, it provides a second substrate. Afterward, it grows on the second substrate a second covers layer, and forms a second wafer structure. The first wafer structure and the second wafer structure are aligned face to face to form structure bonding. Finally, it carries out the first high-temperature treatment, and causes the separation of the first wafer structure and the second wafer structure at the ion implantation layer. Then the second high-temperature treatment is carried out to produce the two-dimensional wrinkling quantum well layer on the separated surface.
priorityDate 2004-06-30^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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