http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I260068-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
| filingDate | 2005-09-30^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-08-11^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb3010384e6abd4c7231c96ab628a632 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27d5e02520f3050ff3402fd7bc1a17f6 |
| publicationDate | 2006-08-11^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I260068-B |
| titleOfInvention | Methods for forming semiconductor device and interconnect |
| abstract | A method for forming a semiconductor device having an extreme low-k dielectric (ELK), the method comprises removing substantially all of a first dielectric formed between adjacent interconnects using an anisotropic etch and then using an isotropic etch, wherein using an anisotropic etch comprises using an interconnect as a mask. A space between the adjacent interconnects is filled with the extreme low-k dielectric. A method for forming interconnect is also provided. |
| priorityDate | 2005-03-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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