| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9884b2360f2413d7edea0d5af39f775a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0421
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-32341
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-323 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 |
| filingDate |
2002-08-28^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-09-21^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_784e566a512f34f33467b7e221500fa9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74e72eb713fce698ff26d2a6785b8030
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3609c503238e9e2de7db0fdde888a3b2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_701849f8af2cf1923e1f7950f95994f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6cf00749008208059c4fbfa5a8f201bc |
| publicationDate |
2006-09-21^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I262606-B |
| titleOfInvention |
Radiation-emitting semiconductor-element and its production method |
| abstract |
This invention relates to a radiation-emitting semiconductor-element with a semiconductor-body (1), which has a radiation-generating active layer (9) and a p-conductive contact-layer (2), which contains InGaN or AlInGaN and on which a contact-metal (3) is applied. In addition, this invention describes a method to produce such a semiconductor-element. |
| priorityDate |
2001-08-30^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |