| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b55c349b43c3ecba4977fd52cc8f8c67 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B32B27-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T83-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K3-36 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09J163-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08L63-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G59-621 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09J7-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate |
2011-07-28^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-09-11^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_334f81717612b72a029585c5e5a9896e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f67ed0d10eca23970047a24da8c46d2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5625cb555ca9c1142441c4c237bd7267 |
| publicationDate |
2013-09-11^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I408205-B |
| titleOfInvention |
Film for flip chip type semiconductor back surface, method for producing release film for semiconductor back surface, and flip chip type semiconductor device |
| abstract |
The present invention relates to a film for flip chip type semiconductor back surface to be formed on a back surface of a semiconductor element flip chip-connected onto an adherend, the film for flip chip type semiconductor back surface having a ratio of A/B falling within a range of 1 to 8×103 (%/GPa), in which A is an elongation ratio (%) of the film for flip chip type semiconductor back surface at 23° C. before thermal curing and B is a tensile storage modulus (GPa) of the film for flip chip type semiconductor back surface at 23° C. before thermal curing. |
| priorityDate |
2010-07-28^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |