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filingDate 2015-11-24^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-01-21^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a72b6a5a1790aef5e4f6fe0d3d48867e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2b031da1889ce6387ad9cc754ea73a8
publicationDate 2018-01-21^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I612594-B
titleOfInvention Metal oxide layered structure and method of forming same
abstract Some embodiments of the present disclosure provide structures and methods. The structure includes an integrated circuit die, which is packaged at least from the side, and a redistribution structure on the integrated circuit die and the package. The redistribution structure is electrically coupled to the integrated circuit die. The redistribution structure includes at least a first dielectric layer on the package, a metallization pattern on the first dielectric layer, a metal oxide layered structure on the metallization pattern, and the first dielectric layer and the metal The second dielectric layer on the pattern. The metal oxide layered structure includes a metal oxide layer, the metal oxide layer has a ratio of metal atoms to oxygen atoms of substantially 1: 1, and the thickness of the metal oxide layer is at least 50Å. The second dielectric layer is a light-sensitive material. The metal oxide layered structure is located between the metallization pattern and the second dielectric layer.
priorityDate 2015-02-13^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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