| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0617
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate |
2013-07-22^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-03-01^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07bb8392facdaba582b2821adaf4f565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86278739d78f82e4e8019458d88aea98
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2fe75a0d2e464a33d9fd0623d9f0e7b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_580140e36b170df6fc00abfe7aef4ade
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94be08b26f8d4214f1b952ccdf04b9f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3da84410271e83924480c429e338daba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7737a2da40412e9fded903199546924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a573ef6c456478ce2ffc150bbcce9f7d |
| publicationDate |
2018-03-01^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I617035-B |
| titleOfInvention |
Semiconductor device |
| abstract |
One aspect of the present invention provides an insulating film capable of suppressing diffusion of hydrogen into an oxide semiconductor film in an oxide of an oxide semiconductor. In addition, a semiconductor device including a transistor using a germanium semiconductor and a transistor using an oxide semiconductor and having good electrical characteristics is provided. Two nitride insulating films having different functions from each other are disposed between a transistor using a germanium semiconductor and a transistor using an oxide semiconductor. Specifically, a first nitridation insulating film containing hydrogen is provided on a transistor using a germanium semiconductor, and a first nitride insulating film is provided between the first nitride insulating film and a transistor using an oxide semiconductor. The film has a low hydrogen content and functions as a hydrogen barrier film second nitridation insulating film. |
| priorityDate |
2012-07-27^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |