| abstract |
The invention relates to a method for coating a semiconductor wafer (120) with an epitaxial deposition layer in an epitaxial reactor (100), wherein during the coating process, at least one semiconductor wafer (120) is disposed in an epitaxial reaction On the corresponding susceptor (110) in the reactor (100) and pass the first deposition gas for coating the at least one semiconductor wafer (120) through the epitaxial reactor (100), wherein before each coating process An etching process is performed in which the first etching gas and the carrier gas are passed through the epitaxial reactor (100), and wherein a cleaning process is performed after each predetermined number of coating processes, during which the cleaning process is performed The second etching gas, and in particular the subsequent second deposition gas, passes through the epitaxial reactor (100), wherein for two or more etching processes before the corresponding coating process, the two or more The etching process sets at least one variable that affects the etching process. |