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inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_278a5eabb56fb8fd161e2de6063ee812
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publicationDate 2018-08-11^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I632646-B
titleOfInvention Resistive memory element
abstract A resistive memory element comprising: a p-type layer; a tunneling structure formed on the p-type layer; and an N-type layer formed on the tunneling structure; wherein the p-type layer and the N are applied When a bias voltage between the layers is greater than a reset voltage, the resistive memory element is in a reset state, and the bias voltage applied between the P-type layer and the N-type layer is less than a set voltage The resistive memory element is in a set state.
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