Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-85 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0335 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-161 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-764 |
filingDate |
2015-01-05^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2018-09-11^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e364b06b3b5c422e2476557f4b40ceb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b9ab4cdd3819703bcfce94f49b6b859 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dba3eb1ce495bb804c8fc508eb89e08c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a23acbe839d9a431eb254119c5836dbb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c66c959c7b75440b0e34f56f999193b3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbc77733573d092268c1cee40f4db025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1fa6c62e6b58afe75fda7f09f94ad784 |
publicationDate |
2018-09-11^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-I635610-B |
titleOfInvention |
Method of using holes to distribute conductive patterned residues to fabricate semiconductor components and components fabricated using the same |
abstract |
A method of manufacturing a semiconductor element includes forming a conductive layer on a substrate; forming an air gap or other void between the conductive layer and the substrate; patterning the conductive layer to expose the air gap. The method may further include forming a conductive pillar between the substrate and the conductive layer. The air gap may be positioned between the conductive pillars. |
priorityDate |
2014-01-06^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |