http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I641141-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-247 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B44-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 |
| filingDate | 2013-06-20^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-11-11^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7737a2da40412e9fded903199546924 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71d50a7293caba9c14997027f9784f5a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3da84410271e83924480c429e338daba http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_580140e36b170df6fc00abfe7aef4ade http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5d9cf7ff1e489b8fdf9960789a811c8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94be08b26f8d4214f1b952ccdf04b9f1 |
| publicationDate | 2018-11-11^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I641141-B |
| titleOfInvention | Semiconductor device |
| abstract | In the transistor having an oxide semiconductor film, hydrogen and nitrogen are suppressed from moving to the oxide semiconductor film. In addition, in a semiconductor device formed using a transistor having an oxide semiconductor, variations in electrical characteristics are suppressed to improve reliability. An embodiment of the present invention includes a transistor having an oxide semiconductor film and a nitride insulating film provided on the transistor. The molecular weight of hydrogen released from the nitride insulating film is less than 5 × by a thermal desorption spectrum analysis method. 10 21 molecules / cm 3 , preferably 3 × 10 21 molecules / cm 3 or less, more preferably 1 × 10 21 molecules / cm 3 or less, and the molecular weight of ammonia released from the nitrided insulating film is less than 1 × 10 22 The molecule / cm 3 is preferably 5 × 10 21 molecules / cm 3 or less, and more preferably 1 × 10 21 molecules / cm 3 or less. |
| priorityDate | 2012-06-29^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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