| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6c8d4dc7bd1a30d8fda907fceaeb4e69 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B7-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02389
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02647
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B7-105 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40 |
| filingDate |
2014-12-12^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-12-11^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_136da8151a38d009aae89e7091642fc9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5aba90cc09fccee84dea62b0d028864c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e7057537553f65b94ee1c4a6465ea6e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a34b5a60f1807158eb6f333ce3d8a3c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5a8416cd24f595d67b0db59d843ec69
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf099fd3b312ed8c2ed0e461178ac3c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f49ded4dd8f82ac44475c9de4062da16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_969664276c0643b24594a89561f30b32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85a6e6ec40dff0ab3cd0080da69f5ae8 |
| publicationDate |
2018-12-11^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I643985-B |
| titleOfInvention |
GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor device |
| abstract |
The present invention provides a disc-shaped GaN substrate used in a disc-shaped GaN substrate whose angle between the normal of the main surface manufactured by the paving method and the m-axis is 0° or more and 20° or less and has a diameter of 45 to 55 mm The technique of reducing the number of crystal regions to 4 or less. According to a preferred embodiment, there is provided a GaN substrate having a first main surface and a second main surface on the opposite side, and the angle between the normal of the first main surface and the m-axis is 0° or more And a disc-shaped GaN substrate with a diameter of 45 mm or more and a diameter of 20 mm or less and consisting of 4 or less crystal regions exposed on both the first main surface and the second main surface, and the 4 or less crystal regions The direction of the orthographic projection of the c-axis on the first main surface is aligned. |
| priorityDate |
2014-01-17^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |