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filingDate 2017-08-21^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-12-21^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d33ab6813131be4d7d676eaa73f33814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b14efcb8eec3c910b5e247d982f5fa5
publicationDate 2018-12-21^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I645448-B
titleOfInvention Method for forming a semiconductor device structure including a two-dimensional material structure, and related semiconductor device structure and electronic system
abstract The present invention discloses a method of forming a semiconductor device structure. The method includes forming at least one 2D material over a substrate. Processing the at least one 2D material with at least one laser beam having a frequency of electromagnetic radiation corresponding to a resonance frequency of a crystal defect in the at least one 2D material to selectively excite and shift from the at least one 2D material In addition to these crystal defects. Also disclosed are additional methods of forming a semiconductor device structure, and related semiconductor device structures, semiconductor devices, and electronic systems.
priorityDate 2016-08-31^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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